Reverse conducting thyristor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsNoritoshi Hirano, Yoshihiro Yamaguchi, Katsumi Satoh
Life of this patent
Estimating the term…
Abstract
Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and avoid variations in insulation characteristics. A separation portion between a diode and a GTO thyristor includes a semiconductor substrate of a first conductivity type, a thin film region of a second conductivity type formed in a major surface of the semiconductor substrate, and a guard ring region of the second conductivity type.
Claims9
A reverse conducting thyristor in which a diode and a thyristor are reverse parallel-connected and formed on the same substrate, comprising:
- a semiconductor substrate of a first conductivity type;
- a diode region of a second conductivity type of said diode, formed in a major surface of said semiconductor substrate;
- and
- a base region of the second conductivity type of said thyristor, formed in said major surface of said semiconductor substrate so as to be separated from said diode region of the second conductivity type by a separation region,
- wherein said separation region includes a thin film region of the second conductivity type formed in said major surface of said semiconductor substrate and a guard ring region of the second conductivity type.
Dependencies are inferred from the claim text.