Method of correcting topographical effects on a micro-electronic substrate

A method of correcting topographical effects on a microelectronic substrate, the method comprising the steps consisting in:

• i) depositing a first layer of resin on the structure to be planarized that has topography in relief surrounded by isolation zones;
• ii) subjecting said resin layer in its zones superposed over underlying zones of low topographical density to photolithography by means of a mask imposing resin patterns of a size smaller than the underlying isolation zones to be masked;
• iii) subjecting the resin layer in its zones superposed on underlying zones of high topographical density to photolithography through a mask possessing a standard mesh without any one-to-one coincidence with the underlying topography wherein said step iii) of photolithography through a mask possessing a standard mesh consists in adjusting the insolation to obtain optimum filling of large topographically dense zones;
• iv) subjecting the first layer of resin as photo-lithographed in this way to thermal flow so that the resulting zones of the first layer of resin cover the isolation zones;
• v) depositing a second layer of resin;
• vi) performing plasma etching;
• and then
• vii) performing mechanical and chemical polishing.