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US 6,387,804 B1Granted
Passivation of sidewall spacers using ozonated water
AssigneeAdvanced Micro Devices, Inc.
InventorJohn C. Foster
Life of this patent
Estimating the term…
Abstract
Shorting between a transistor gate electrode and associated source/drain regions due to metal silicide formation on the sidewall spacers is prevented by passivating the sidewall spacer surfaces with a mixture of ozone and water. Embodiments of the invention include spraying the wafer with or immersing the wafer in, a saturated solution of ozone in water.
Claims12
A method of manufacturing a semiconductor device, the method comprising:
- providing an intermediate product comprising:
- a gate electrode on a semiconductor substrate with a gate insulating layer therebetween, the gate electrode having an upper surface and opposing side surfaces;
- and sidewall spacers on the opposing side surfaces;
- and
- contacting the sidewall spacers with a fluid comprising ozone and water for a period of time sufficient to passivate the sidewall spacers.
2 more elements
Dependencies are inferred from the claim text.