Method of fabricating a dielectric antifuse structure

A method of fabricating dielectric antifuse structures, which comprises the following method steps:

• providing an oxide layer having first contact holes for contacts and second contact holes for antifuse structures;
• forming a dielectric layer on a surface of the oxide layer;
• applying an organic antireflection layer to the dielectric layer;
• applying a resist layer on the organic antireflection layer;
• lithographically patterning the resist layer, wherein the second contact holes remain covered with the resist layer;
• etching the organic antireflection layer through openings in the resist layer above the first contact holes and
• subsequently etching the oxide layer through openings in the organic antireflection layer for producing interconnect structures above the contacts;
• etching residues of the antireflection layer in the first contact holes;
• etching an uncovered part of the dielectric layer in the first contact holes;
• removing the resist layer and underlying segments of the organic antireflection layer;
• and
• depositing a second conductive layer on the segments of the dielectric layer of the antifuse structures.