US 6,387,772 B1Granted

Method for forming trench capacitors in SOI substrates

AssigneeAgere Systems Guardian Corp.

InventorsSailesh Chittipeddi, Charles Walter Pearce, Pradip Kumar Roy

Life of this patent

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Abstract

A trench capacitor formed on an SOI substrate extends through an upper silicon layer and an insulating layer and into a semiconductor base substrate. The outer electrode of the trench capacitor includes portions of the semiconductor base substrate which bound the trench in which the trench capacitor is formed. The outer electrode is coupled to a contact structure formed in close proximity to the trench capacitor, and which extends through the insulating layer. The method for simultaneously producing the trench capacitor and contact structure includes forming two trench openings, forming a dielectric liner on one of the trench openings, then filling each of the trench openings with a semiconductor material.

Claims11

Dependent claims

A method for forming a semiconductor device, comprising the steps of:

(a) providing a silicon-on-insulator substrate, said silicon-on-insulator substrate including a silicon layer formed over an insulating layer formed over a semiconductor base substrate;
(b) forming a duality of trench openings extending through-said silicon layer and said insulating layer and extending into said semiconductor base substrate;
(c) thermally oxidizing to selectively form an oxide liner directly on sidewalls and a bottom surface of a first trench opening of said duality of trench openings, but not the second trench opening of said duality of trench openings;
and
(d) filling each of said trench openings with a semiconductor material thereby forming a trench capacitor in said first trench opening and a contact structure in said second trench opening, said contact structure electrically coupled to said trench capacitor through said semiconductor base substrate.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/557,536Filed 25 Apr 2000
Granted: 14 May 2002
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 1/047
Of capacitors having potential barriers, e.g. varactors: of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
H10D 1/665
Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors: trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
H10D 86/201
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D
Inorganic electric semiconductor devices