Anneal for enhancing the electrical characteristic of semiconductor devices
AssigneesApplied Materials, Inc., Vanguard Semiconductor Corporation
InventorsWong-Cheng Shih, Pravin K. Narwankar, Randall S. Urdahl, Turgut Sahin
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Abstract
A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.
Claims10
A method of forming a semiconductor transistor comprising steps of:
- exposing a substrate having a silicon nitride film formed on a silicon surface to an ambient comprising hydrogen (H2) and nitrogen (N2) while heating said substrate;
- and
- forming a dielectric layer on said ambient exposed silicon nitride film,
- forming a gate electrode over said dielectric layer;
- and
- forming a pair of source/drain regions on opposite sides of said gate electrode.
A method of forming a metal insulated semiconductor (MIS) transistor, said method comprising the steps of:
- forming a silicon nitride film on a monocrystalline silicon surface of a substrate;
- heating said substrate to a temperature between 700-850° C;
- while heating said substrate, exposing said substrate to an ambient comprising hydrogen (H2) and nitrogen (N2);
- forming a dielectric layer on said ambient exposed silicon nitride layer;
- forming a gate electrode over said dielectric layer;
- and
- forming a pair of source/drain regions on opposite sides of said gate electrode.
Dependencies are inferred from the claim text.