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US 6,387,755 B1Granted
Method and system for providing localized gate edge rounding with minimal encroachment and gate edge lifting
AssigneeAdvanced Micro Devices, Inc.
InventorsTimothy J. Thurgate, Scott D. Luning
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Abstract
A system and method for providing a memory cell on a semiconductor is disclosed. The method and system include providing an oxide layer on the semiconductor and providing at least one gate stack disposed above the oxide layer. The at least one gate stack has a corner contacting the oxide layer. The method and system further include exposing at least the corner of the at least one gate stack and rounding at least the corner of the at least one gate stack.
Claims10
A method for providing a memory cell on a semiconductor substrate comprising the steps of:
- (a) providing an oxide layer on the semiconductor substrate;
- (b) providing at least one gate stack disposed above the oxide layer, the at least one gate stack having a corner contacting the oxide layer, the corner being at an edge of the gate stack, the gate stack including at least a floating gate and a control gate;
- (c) exposing at least the corner of the at least one gate stack, wherein the corner comprises a portion of a vertical side surface and a portion of a horizontal bottom surface of the at least one gate stack by removing a portion of the oxide layer under the gate stack such that the portion of the horizontal bottom surface is exposed;
- and
- (d) rounding at least the corner of the at least one gate stack, after at least the corner of the at least one gate stack has been exposed.
2 more elements
Dependencies are inferred from the claim text.