Method of making a semiconductor device having a polydiode element
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHiroshi Onoda, Masaaki Mihara, Hiroshi Takada
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Abstract
An aluminum wire is connected to a P-type layer of a polydiode element through a resistive element consisting of a barrier metal film and a tungsten plug. Another aluminum wire is connected to an N-type layer of the polydiode element through another resistive element consisting of another barrier metal film and another tungsten plug. Thus, a semiconductor device including a polydiode element which is resistant to surge or contamination is provided.
Claims4
A method of fabricating a semiconductor device having a peripheral circuit PMOS transistor and a P-N function polydiodie element having an N-type layer and a P-type layer, comprising the steps of:
- forming an element isolation oxide film on a surface of a semiconductor substrate;
- forming a polysilicon layer serving as a matrix for said polydiode element on said element isolation oxide film;
- injecting P+ ion into said polysilicon layer simultaneously with P+ ion implantation for forming a sorce/drain region of said PMOS transistor, thereby forming said P-type layer of said polydiode element;
- forming said N-type layer of said polydiode element;
- and
- forming said PMOS transistor on said semiconductor substrate.
A method of fabricating a semiconductor device comprising a PMOS transistor, NMOS transistor and a P-N junction polydiode element an N-type layer and a P-type layer, comprising the steps of:
- forming an element isolation oxide film on a surface of a semiconductor substrate;
- forming a polysilicon layer serving as a matrix for said polydiode element on said element isolation oxide film;
- injecting P+ ion into said polysilicon layer simultaneously with P+ ion implantation for forming a sorce/drain region of said PMOS transistor, thereby forming said P-type layer;
- injecting N+ ion into said polysilicon layer simultaneously with P+ ion implantation for forming a sorce/drain region of said NMOS transistor, thereby forming said P-type layer;
- and
- forming said PMOS transistor and said NMOS transistor on said semiconductor substrate.
Dependencies are inferred from the claim text.