Pattern forming material and pattern forming method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakahiro Matsuo, Masayuki Endo, Masamitsu Shirai, Masahiro Tsunooka
Life of this patent
Estimating the term…
Abstract
A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0<x<1; and y satisfies a relationship of 0<y<1.
Claims4
A pattern forming method comprising:
- a first step of forming a resist film by coating a semiconductor substrate with a pattern forming material including a copolymer having a first group for generating a base through irradiation with an energy beam and a second group having an acidic property;
- a second step of selectively irradiating said resist film with said energy beam by using a mask having a desired pattern, generating said base in an exposed area on said resist film and neutralizing said generated base with said second group;
- a third step of supplying metal alkoxide onto said resist film and forming a metal oxide film on a surface of an unexposed area on said resist film;
- and
- a fourth step of forming a resist pattern by dry-etching said resist film by using said metal oxide film as a mask.
Dependencies are inferred from the claim text.