Phase shift mask using CrAION as phase shifter material and manufacturing method thereof

Abstract

A phase shift mask formed by depositing on a transparent substrate a phase shifter material containing chromium (Cr), aluminum (Al), oxygen (O) and nitrogen (N). The transmissivity of a phase shifting layer of the phase shift mask, which is a CrAION layer, is increases, and the phase of exposure light is shifted by 180° at a predetermined thickness, so that a fine photoresist pattern can be formed. Also, the transmissivity of the phase shifting layer with respect to inspection light, which has a longer wavelength than exposure light, is relatively low, which permits accurate inspection of the mask. The phase shift mask can be useful in photolithography using a short wavelength of exposure light, and in an inspection apparatus using an inspection light source having a longer wavelength than exposure light.

Dependencies are inferred from the claim text.