Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers

A single-substrate processing CVD procedure for depositing a metal film for wiring purposes on a substrate having a first trench, a second trench, and a via hole, wherein the second trench is narrower than the first trench and the via hole is narrower than the second trench, the procedure comprises the steps of:

• in a first thermal CVD process, depositing a film under first deposition conditions where the rate of film deposition is relatively low and the filling characteristics are good, and during the first CVD process the via hole and the second trench are completely filled and the first trench is incompletely filled;
• and
• in a second thermal CVD process, depositing a film under second film deposition conditions where the rate of film deposition is higher than under the first deposition conditions and the filling characteristics are not as good as under the first deposition conditions, and in the second CVD process, the first trench is completely filled;
• wherein the first CVD process and the second CVD process are carried out sequentially to complete one film deposition procedure;
• and
• wherein the substrate temperature under the first film deposition conditions is within the range of 150 to 190° C., and the substrate temperature under the second film deposition conditions is within the range of 190 to 230° C.