Single crystal producing method and apparatus
AssigneeMurata Manufacturing Co., Ltd.
InventorsMikio Geho, Takenori Sekijima, Takashi Fujii
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Abstract
A single crystal producing method for growing a single crystal, comprises the steps of: placing a material at one focal point in a light-condensing and heating furnace having an ellipse in section; placing a heat light source at another focal point; and emitting a laser beam has a wavelength of not less than about 160 nm and not greater than about 1,000 nm, on or near the one focal point to form a melt zone; and moving the melt zone to grow a single crystal.
Claims18
In a single crystal producing method for growing a single crystal, comprising placing a material from which the single crystal is to be produced at a first focal point of a furnace having an interior comprising at least one elliptical cross-section and having a heat light emitter at a second focal point, applying a laser beam on the first focal point and moving the zone of melting of the material created by the laser and heat light, the improvement which comprises employing a laser beam which has a wavelength of not less than about 160 nm and not greater than about 1,000 nm.
A single crystal producing apparatus for growing a single crystal, comprising:
- a light-condensing and heating furnace whose interior has an ellipse section and contains first and second focal points on which light is condensed,
- a material from which the single crystal is to be produced movably disposed at the first focal point,
- a heat light source disposed at the second focal point and
- a laser adapted to apply a laser beam at about the first focal point to form a melt zone in the material, wherein the laser beam has a wavelength within the range of about 160 to about 1000 nm.
Dependencies are inferred from the claim text.