Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting material
AssigneeClariant (France) S.A.
InventorsEric Jacquinot, Pascal Letourneau, Maurice Rivoire
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Abstract
Process for mechanical chemical polishing of a layer of an aluminium or aluminium alloy conducting material used in the microelectronics semi-conductors industry in which said aluminium or aluminium alloy layer is abraded using an abrasive composition which comprises an alkaline aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, a tetraalkylammonium hydroxide and an oxidizing agent.
Claims16
A process for mechanical chemical polishing of a layer of an aluminium or aluminium alloy conducting material used in the microelectronics semi-conductors industry, characterized in that said aluminium or aluminium alloy layer is abraded using an abrasive composition which comprises an alkaline aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, a tetraalkylammonium hydroxide and an oxidizing agent.
An abrasive for mechanical chemical polishing of an aluminium or aluminium alloy conducting material used in the microelectronics semi-conductors industry, characterized in that it contains an abrasive composition which comprises an alkaline aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, a tetraalkylammonium hydroxide and an oxidizing agent.
Use of an abrasive composition comprising an alkaline aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, a tetraalkylammonium hydroxide and an oxidizing agent, for mechanical chemical polishing of an aluminium or aluminium alloy conducting material used in the microelectronics semi-conductors industry.
Dependencies are inferred from the claim text.