Method for drying a semiconductor wafer, a mixture for drying, and a dryer
AssigneeNEC Corporation
InventorYasushi Sasaki
Life of this patent
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Abstract
A mixture of lower alcohols whose mean molecular weight is 46 or less is supplied onto a surface of a semiconductor wafer cleansed with water. With this supply, the amount of alcohols left on the semiconductor wafer which has been dried can be suppressed to 2 ng/cm2 or less, and thus a gate oxide film formed on the semiconductor wafer is prevented from deterioration. As a result, a high yield of semiconductor products can be realized.
Claims8
A method for drying a semiconductor wafer cleansed with water, comprising drying a semiconductor wafer by supplying alcohol whose mean molecular weight is 46 or less to a surface of said semiconductor wafer.
A mixture which is to be used to dry a semiconductor wafer cleansed with water, wherein said mixture is made of two or more kinds of alcohols, and has mean molecular weight which is 46 or less.
A dryer, comprising:
- a room for drying a semiconductor wafer cleansed with water;
- a holder which is arranged at a predetermined position in said room, and is for holding said semiconductor wafer;
- and
- a supplier for supplying a mixture for drying said semiconductor wafer to a surface of said semiconductor wafer placed in said room,
- wherein said supplier supplies said mixture which has hydrophilicity, volatility, and mean molecular weight which is 46 or less.
Dependencies are inferred from the claim text.