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AssigneeMitsubishi Materials Corporation
InventorsSaburo Wakita, Akira Mitsuhashi, Yoshinobu Nakada, Jun-ichi Sasaki, Yuhji Ishiwari
Estimating the term…
A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.
An apparatus for producing a silicon ingot having a directional solidification structure, the apparatus comprising an underfloor heater, a chill plate mounted on the underfloor heater, a crucible mounted on the chill plate, an overhead heater provided over the crucible, an overhead heat insulator provided over the crucible, an underfloor heat insulator mounted under the underfloor heater and chill plate, and a heat insulator surrounding a circumference of the crucible, wherein the heat insulator surrounding the circumference of the crucible is thicker than the overhead heat insulator and the underfloor heat insulator and an inert gas feed connected to a space in the apparatus containing the crucible, wherein an inert gas is directed toward the surface of a molten silicon in the crucible through the inert gas feed device.
An apparatus for producing a silicon ingot having a directional solidification structure, the apparatus comprising an underfloor heater, a chill plate mounted on the underfloor heater, a crucible mounted on the chill plate, an overhead heater provided over the crucible and a heat insulator surrounding a circumference of the crucible, an inert gas feed device connected to a space in the apparatus containing the crucible, wherein an inert gas is directed toward the surface of a molten silicon in the crucible through the inert gas feed device.
An apparatus for producing a silicon ingot having a directional solidification structure, the apparatus comprising an underfloor heater, a chill plate mounted on the underfloor heater, a crucible mounted on the chill plate, an overhead heater provided over the crucible and a heat insulator surrounding a circumference of the crucible, the apparatus further comprising an inert gas feed device connected to a space in the apparatus containing the crucible, and an inert gas pre-heating device that is provided with a pre-heating chamber including a pre-heater and positioned between the inert gas feed device and the space in the apparatus containing the crucible.
An apparatus for producing a silicon ingot having a directional solidification structure, the apparatus comprising an underfloor heater, a chill plate mounted on the underfloor heater, a crucible mounted on the chill plate, an overhead heater provided over the crucible and a heat insulator surrounding a circumference of the crucible, the apparatus further comprising a gas passage, connecting an interior of the chill plate to a space in the apparatus containing the crucible, and a preheating coil provided around the gas passage.
Dependencies are inferred from the claim text.