Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps
AssigneeWafertech, LLC
InventorsJessie C. Shan, Chang-Kuei Huang, Steve H. Y. Yang
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Abstract
A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.
Claims1
A method of forming an HDPCVD oxide layer into high aspect ratio gaps using a HDPCVD oxide formation process, the HDPCVD oxide process having a deposition-to-sputter ratio, the method comprising:
- flowing silane and oxygen into a single HDPCVD reaction chamber;
- and
- adjusting the silane and oxygen flow rates to discretely and sequentially increase the deposition-to-sputter ratio of the HDPCVD oxide formation process to at least three different sequentially increasing deposition-to-sputter ratios during the formation of the HDPCVD oxide layer while in a single HDPCVD process chamber and until the HDPCVD oxide layer is formed.
Dependencies are inferred from the claim text.