Method of fabricating a semiconductor device

A method of fabricating a semiconductor device, comprising the steps of:

• forming a base film comprising an insulating film having a thermal conductivity of 10 Wm−1K−1 or less in contact with a substrate;
• forming an amorphous semiconductor film comprising silicon on said base film;
• forming a second protective insulating layer on said amorphous semiconductor film;
• forming an opening in said second protective insulating layer;
• forming a first protective insulating layer on said second protective insulating layer and in said opening;
• selectively forming a thermal conduction layer having a thermal conductivity of 10 Wm−1K−1 or more on said first protective insulating layer and substantially in said opening of said second protective insulating layer;
• irradiating a laser beam from above said first protective insulating layer and said thermal conduction layer to crystallize said amorphous semiconductor film and to form a crystalline semiconductor film which has a crystal grain centering round said thermal conduction layer;
• selectively etching said crystalline semiconductor film to form an insular semiconductor film comprising a single crystal structure;
• and
• hydrogenating said insular semiconductor film to introduce hydrogen into said insular semiconductor film.

A method of fabricating a semiconductor device comprising a thin film transistor over a substrate, comprising the steps of:

• forming a base film comprising an insulating film having a thermal conductivity of 10 Wm−1K−1 or less in contact with said substrate;
• forming an amorphous semiconductor film comprising silicon on said base film;
• forming a first protective insulating layer on said amorphous semiconductor film;
• selectively forming a thermal conduction layer having a thermal conductivity of 10 Wm−1K−1 or more on said first protective insulating layer;
• irradiating a laser beam from above said first protective insulating layer and said thermal conduction layer to crystallize said amorphous semiconductor film and to form a crystalline semiconductor film which has a crystal grain centering round said thermal conduction layer;
• selectively etching said crystalline semiconductor film to form an insular semiconductor film comprising a single crystal structure;
• and
• hydrogenating said insular semiconductor film to introduce hydrogen into said insular semiconductor film,
• wherein a channel forming region of said thin film transistor is formed of said insular semiconductor film comprising said single-crystal structure containing said hydrogen.

A method of fabricating a semiconductor device comprising a thin film transistor is provided over a substrate, comprising the steps of:

• forming a base film comprising an insulating film having a thermal conductivity of 10 Wm−1K−1 or less in contact with said substrate;
• forming an amorphous semiconductor film comprising silicon on said base film;
• forming a second protective insulating layer on said amorphous semiconductor film;
• forming an opening in said second protective insulating layer;
• forming a first protective insulating layer on said second protective insulating layer and in said opening;
• selectively forming a thermal conduction layer having a thermal conductivity of 10 Wm−1K−1 or more on said first protective insulating layer and substantially in said opening of said second protective insulating layer;
• irradiating a laser beam from above said first protective insulating layer and said thermal conduction layer to crystallize said amorphous semiconductor film and to form a crystalline semiconductor film which has a crystal grain centering round said thermal conduction layer;
• selectively etching said crystalline semiconductor film to form an insular semiconductor film comprising a single crystal structure;
• and
• hydrogenating said insular semiconductor film to introduce hydrogen into said insular semiconductor film;
• wherein a channel forming region of said thin film transistor is formed of said insular semiconductor film comprising said single crystal structure containing said hydrogen.