Nonvolatile semiconductor memory device

Abstract

A nonvolatile semiconductor memory device comprises a semiconductor substrate, element isolating regions provided in the semiconductor substrate, first element regions, each of which is defined by two adjacent ones of the element isolating regions, and memory cell transistors formed in the element regions, wherein each of the memory cell transistors comprises a first gate insulating film formed on a corresponding one of the element isolating regions, a floating gate electrode formed on the gate insulating film, a second gate insulating film formed on the floating gate electrode, and a control electrode formed on the second gate insulating film and connected in common to a specific number of ones of the memory cell transistors to serve as a word line, and the floating gate includes a first conductive member with side faces in contact with side ends of the two adjacent ones of the element isolating regions and a second conductive member electrically connected to the first conductive member and formed so as to bridge a gap between the two adjacent ones of element isolating regions.

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