Manufacturing method of semiconductor device

Abstract

The present invention relates to a method of manufacturing a semiconductor device; which comprises the steps of forming, upon a substrate having a plurality of raised sections on the surface, a polysilicon film so as to fill up recesses formed between these raised sections and, through patterning, forming a polysilicon line therefrom; forming a natural oxidation film or an oxide film with a thickness of 1 nm to 3 nm on the surface of said polysilicon line; forming an additional polysilicon film, and thereafter etching back said additional polysilicon film; forming an insulating film thereon, and thereafter forming sidewalls from said insulating film through eteching back; forming a diffusion region on said substrate; and forming a silicide film over said polysilicon line. According to the present invention, a silicide film can be formed evenly over a polysilicon line that is formed on a stepped substrate so that, with this technique, semiconductor devices having excellent characteristics and reliability can be manufactured with a high yield.

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