Method of manufacturing a bipolar transistor

Abstract

There is provided a bipolar transistor integrated circuit device having excellent characteristics by a simple process. A region where an impurity is not introduced is disposed in a part of a buried layer region for separating a collector region from a substrate, so that a bipolar transistor having low collector resistance can be formed. This can be applied also to a BiCMOS where insulated field effect transistors exist on the same substrate. These processes can be realized without adding a number of steps to a conventional process.

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