Method of fabricating nonvolatile memory device

Abstract

A method of fabricating a nonvolatile memory device having a first conductivity type substrate, includes the steps of forming a gate insulating layer on the entire surface of the semiconductor substrate, forming a plurality of floating gate lines on the gate insulating layer, forming first sidewall spacers on both sides of each floating gate, forming a plurality of impurity regions having a second conductivity type in the substrate between the floating gate lines, forming a dielectric layer on the floating gate lines, forming a plurality of control gate lines on the dielectric layer, forming second sidewall spacers on both sides of the control gate lines, selectively etching the dielectric layer and the floating gate lines to form a plurality of floating gates, forming tunneling insulating layers on both sides of the floating gates, and forming a plurality of program lines between the impurity regions.

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