US 6,335,125 B1 · Photomask and method of manufacturing same

Abstract

A photomask has an isolated residual pattern formed on it, and a translucent film formed on both sides of this isolated residual pattern, with a space pattern part therebetween, the width of the translucent film being approximately equal to the line width of the isolated residual pattern.

Claims0

Dependent claims

Claims aren’t available for this document.

Facts

Application

09/272,576Filed 19 Mar 1999

Published

US 2001/0038951 A18 Nov 2001

Granted

1 Jan 2002

Term ends

Not estimatedThe source records don’t support an estimate.

Classification3 codes

G03F 7/70433
Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating…
G03F 1/36
Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles…
G03F
Photomechanical production of textured or patterned surfaces

Photomask and method of manufacturing same

Life of this patent

Abstract

Claims0

Photomask and method of manufacturing same

Life of this patent

Abstract

Claims0