Phase shift mask and phase shift mask blank

Abstract

The method of manufacturing a halftone phase shift mask blank enables the accurate and easy control over the composition of an MSi semitransparent film that makes it easy to obtain an MSi semitransparent film having a desired specific component, the formation of film with ease at a good reproducibility and the reduction of defects in the layer. A novel process for the production of a halftone type phase shift mask blank adapted for the preparation of a phase shift mask having a semitransparent film formed on a transparent substrate, said semitransparent film being capable of making the phase of light transmitted directly by said semitransparent film different from that of light transmitted by said transparent substrate by a predetermined amount and reducing the intensity of light, characterized in that said semitransparent film is formed using a sputtering target comprising at least one element selected from the group consisting of metal elements and transition metal elements, silicon and at least one compound selected from the group consisting of oxide, nitride and oxinitride of these elements.

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