Method for exposure-mask inspection and recording medium on which a program for searching for portions to be measured is recorded
AssigneeKabushiki Kaisha Toshiba
InventorsKoji Hashimoto, Shigeki Nojima
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Abstract
Disclosed is an exposure mask inspecting method for use in manufacturing semiconductor devices. This inspecting method calculate gradients of a correlation curve of a variation in critical dimension of an exposure mask and a variation in critical dimension of a resist, extracts portions having large slopes of the correlation curve, and slopes the portions having large slopes of the correlation curve as to-be-measured portions at the time of verifying the specifications of the surface critical dimension of the exposure mask.
Claims10
An exposure mask inspecting method comprising the steps of:
- calculating slopes of a correlation curve of a variation in critical dimension of an exposure mask and a variation in critical dimension of a resist;
- extracting portions having large slopes of said correlation curve;
- and
- selecting to-be-measured portions at which the critical dimension of said exposure mask is to be measured, from said extracted portions having large slopes of said correlation curve.
A machine-readable recording medium on which a program for searching for optimal to-be-measured portions for measuring a critical dimension of an exposure mask is recorded, said program comprising the steps of:
- calculating slopes of a correlation curve of a variation in critical dimension of an exposure mask and a variation in critical dimension of a resist;
- extracting portions having large slopes of said correlation curve;
- and
- designating said extracted portions having large slopes of said correlation curve as candidates for to-be-measured portions at which the critical dimension of said exposure mask is to be measured.
Dependencies are inferred from the claim text.