Semiconductor device and method for fabricating the same
AssigneeSony Corporation
InventorToshiaki Hasegawa
Life of this patent
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Abstract
A semiconductor device includes an inorganic insulating film provided on a low-dielectric-constant film, a hole pattern which passes through at least the inorganic insulating film, and a dummy hole pattern which passes through the inorganic insulating film. The dummy hole pattern is preferably formed in a region in which the pattern density of the hole pattern is low. The dummy hole pattern may include a trench or a hole. A method for fabricating a semiconductor device includes the steps of forming an inorganic insulating film on a low-dielectric-constant film, forming a hole pattern which passes through at least the inorganic insulating film, and forming a dummy hole pattern which passes through the inorganic insulating film.
Claims21
A semiconductor device comprising:
- an inorganic insulating film provided on a low-dielectric-constant film having a relative dielectric constant in the range of from 1.0 to 3.0;
- a hole pattern passing through at least the inorganic insulating film;
- and
- a dummy hole pattern passing through the inorganic insulating film.
A method for fabricating a semiconductor device, comprising the steps of:
- forming an inorganic insulating film on a low-dielectric-constant film having a relative dielectric constant in the range of from 1.0 to 3.0;
- forming a hole pattern passing through at least the inorganic insulating film;
- and
- forming a dummy hole pattern passing through the inorganic insulating film.
Dependencies are inferred from the claim text.