Thin film capacitor with an improved top electrode
AssigneeNEC Corporation
InventorKoji Arita
Life of this patent
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Abstract
A top electrode of a thin film capacitor includes a dielectric oxide layer, a first conductive layer on the dielectric oxide layer, and a second conductive layer over the first conductive layer, wherein the first conductive layer processes at least one of a lower oxidizability and a lower diffusability than the second conductive layer.
Claims24
A multi-layer structure comprising:
- a dielectric oxide layer;
- and
- an electrode having a first conductive layer directly on and contacting said dielectric oxide layer and a second conductive layer directly on and contacting said first conductive layer,
- wherein said first conductive layer processes at least one of a lower oxidizability and a lower diffusability than said second conductive layer.
A multi-layer structure comprising:
- a dielectric oxide layer;
- a first conductive layer on said dielectric oxide layer;
- and
- a second conductive layer over said first conductive layer,
- wherein said first conductive layer processes at least any one of a lower oxidizability and a lower diffusability than said second conductive layer,
- wherein said first conductive layer has a thickness in the range of one-tenth to one-twentieth of a thickness of said second conductive layer.
A multi-layer structure comprising:
- a dielectric oxide layer;
- a first conductive layer on said dielectric oxide layer;
- and
- a second conductive layer over said first conductive layer,
- wherein said first conductive layer processes at least any one of a lower oxidizability and a lower diffusability than said second conductive layer,
- wherein an interface between said first conductive layer and said dielectric oxide layer is such that a density of a leak current across said interface is suppressed at not higher than 1×10−4 A/cm2 upon applying a voltage of 2V across said dielectric oxide layer.
A top electrode structure of a thin film capacitor, said structure comprising:
- an intervening conductive layer directly on and contacting a dielectric oxide layer;
- and
- a top electrode layer directly on and contacting said intervening conductive layer, and said top electrode layer being thicker than said intervening conductive layer,
- wherein said intervening conductive layer processes at least one of a lower oxidizability and a lower diffusability than said top electrode layer.
A top electrode structure of a thin film capacitor, said structure comprising:
- an intervening conductive layer on a dielectric oxide layer;
- and
- a top electrode layer over said intervening conductive layer, and said top electrode layer being thicker than said intervening conductive layer,
- wherein said intervening conductive layer processes at least any one of a lower oxidizability and a lower diffusability than said top electrode layer,
- wherein said intervening conductive layer has a thickness in the range of one-tenth to one-twentieth of a thickness of said top electrode layer.
A top electrode structure of a thin film capacitor, said structure comprising:
- an intervening conductive layer on a dielectric oxide layer;
- and
- a top electrode layer over said intervening conductive layer, and said top electrode layer being thicker than said intervening conductive layer,
- wherein said intervening conductive layer processes at least any one of a lower oxidizability and a lower diffusability than said top electrode layer,
- wherein a density of a leak current of said thin film capacitor is suppressed at not higher than 1×10−4 A/cm2 upon applying a voltage of 2V to said thin film capacitor.
Dependencies are inferred from the claim text.