Dopant control of semiconductor devices
AssigneeInternational Business Machines Corporation
InventorsYun-Yu Wang, Johnathan E. Faltermeier, Philip L. Flaitz, Jeffery L. Hurd, Rajarao Jammy, Radhika Srinivasan, Francis G. Trudeau, Dinah S. Weiss
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Abstract
A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.
Claims25
A semiconductor device formed within a semiconductor substrate and including a buried strap connecting a polysilicon electrode of a trench capacitor formed within said substrate to an active area formed within said substrate, said buried strap including a first surface in a confronting relationship with at least a second surface of said active area, and having at least a portion extending from said first surface comprised of a high-diffusion grain structure, said high-diffusion grain structure formed in response to a plurality of nucleation sites formed on said second surface of said active area and including multiple grains and multiple grain boundaries therein, wherein said second surface is roughened prior to formation of said buried strap.
A semiconductor device formed within a semiconductor substrate, comprising:
- a trench capacitor including a polycrystalline silicon electrode with dopant impurities;
- an active area formed within said substrate and having a first surface;
- and
- a buried strap formed sequentially after said active area and connecting said polycrystalline silicon electrode to said active area, said buried strap including i) a second surface in confronting relationship with at least said first surface, and ii) at least a portion extending from said second surface comprising a high-diffusion grain structure, wherein said first surface is roughened prior to said formation of said buried strap.
A semiconductor contact device comprising a first material having a first surface and a second material having a second surface in confronting relationship with said first surface, said second material including a portion adjacent said second surface comprising a high diffusion grain structure and formed in response to a plurality of nucleation sites formed on said first surface of said first material prior to the formation of said second material, said plurality of nucleation sites formed due to roughening of said first surface, and said high-diffusion grain structure including multiple grain boundaries and multiple grains having a smaller average grain size than grains in other portions of said second material.
A semiconductor device formed within a semiconductor substrate, comprising:
- a first polycrystalline silicon structure with dopant impurities;
- a second structure formed within said substrate and having a second surface;
- and
- a third structure connecting said first polycrystalline silicon structure to said second structure, said third structure including i) a third surface in confronting relationship with at least said second surface, and ii) at least a portion extending from said third surface comprising a high-diffusion grain structure including multiple grains and multiple grain boundaries therein, wherein said high diffusion grain structure is formed in response to said second surface being roughened prior to formation of said third structure.
Dependencies are inferred from the claim text.