Capacitor with noble metal electrode containing oxygen
AssigneeFujitsu Limited
InventorsHiroshi Ashida, Miki Tomotani
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Abstract
The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1×1020 atoms/cm3. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.
Claims14
A semiconductor device comprising:
- a first insulating layer formed on a semiconductor substrate;
- a capacitor formed on the first insulating layer wherein the capacitor includes, a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed on the dielectric oxide film and formed of at least platinum;
- a second insulating layer covering the capacitor;
- and
- a first opening formed in the second insulating layer and formed on the upper electrode;
- wherein the upper electrode exposed from the opening in the second insulating layer contains oxygen having a concentration of more than 1×1020 atoms/cm3, and the second insulating layer is formed in a reduction atmosphere.
A semiconductor device comprising:
- a first insulating layer formed on a semiconductor substrate;
- a capacitor formed on the first insulating layer wherein the capacitor includes, a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed on the dielectric oxide film and formed of at least a noble metal;
- a second insulating layer covering the capacitor;
- and
- a first opening formed in the second insulating layer and formed on the upper electrode;
- wherein the upper electrode exposed from the opening contains oxygen having a concentration of more than 1×1020 atoms/cm3 introduced by annealing, and the second insulating layer is formed in a reduction atmosphere.
Dependencies are inferred from the claim text.