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US 6,333,520 B1Granted
Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor
AssigneeSeiko Epson Corporation
InventorSatoshi Inoue
Life of this patent
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Abstract
A thin film transistor has a structure capable of decreasing deterioration in Vgs-Ids characteristics. The thin film transistor has a source region composed of an N-type impurity-diffused region, a drain region, and a gate electrode, and a channel region formed directly below the gate electrode. To the source region and the drain region are connected a source electrode and a drain electrode, respectively, through a plurality of contact holes. In the channel region are formed a plurality of P-type impurity-diffused regions at constant intervals.
Claims10
A thin film transistor comprising:
- a substrate;
- and
- a non-single crystal silicon thin film on the substrate, the non-single crystal silicon thin film forming a channel region, a first region and a second region of a first conduction type formed in the non-single crystal silicon thin film separated by the channel region,
- wherein a width of at least the channel region of the non-single crystal silicon thin film is larger than a minimum width of the first region and the second region.
1 more element
Dependencies are inferred from the claim text.