Back to results
US 6,333,263 B1Granted
Method of reducing stress corrosion induced voiding of patterned metal layers
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Simon S. Chan, Anne E. Sanderfer, King Wai Kelwin Ko
Life of this patent
Estimating the term…
Abstract
Stress corrosion induced voiding of patterned metal layers is avoided or substantially reduced by removing etching residues before gap filling. Embodiments include etching an Al or Al alloy layer employing fluorine and/or chlorine chemistry, wet cleaning, treating with a nitrogen-containing plasma at a temperature of at least about 400° C. and gap filling with a dielectric material, e.g. HDP oxide by HDPCVD.
Claims10
A method of manufacturing a semiconductor device, the method comprising sequentially:
- forming a metal layer;
- etching the metal layer to form a patterned metal layer comprising metal features having side surfaces with gaps therebetween;
- wet cleaning the patterned metal layer;
- treating the patterned metal layer with a nitrogen-containing plasma;
- and
- depositing a dielectric material in the gaps.
3 more elements
Dependencies are inferred from the claim text.