Method for preventing aluminum intrusions
AssigneeUnited Microelectronics Corp.
InventorsChi-Jung Lin, Jyh-J Huang, Horng-Bor Lu, Kun-Lin Wu
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Abstract
A semiconductor wafer includes a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer. A titanium layer is formed on the bottom and on the walls of the via hole. A physical vapor deposition process is then performed to form a first titanium nitride layer on the titanium layer. A chemical vapor deposition process is then performed to form a second titanium nitride layer on the first titanium nitride layer.
Claims12
A method for preventing aluminum intrusions into a via hole on a semiconductor wafer, the semiconductor wafer comprising a substrate, an aluminum layer on the substrate, an anti-reflection coating on the aluminum layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the aluminum layer, the method comprising:
- forming a titanium layer on the bottom and on the walls of the via hole;
- performing a physical vapor deposition process to form a first titanium nitride layer on the titanium layer;
- and
- performing a chemical vapor deposition process to form a second titanium nitride layer on the first titanium nitride layer.
A method of forming a via plug on a semiconductor wafer, the semiconductor wafer comprising a substrate, a metal layer on the substrate, an anti-reflection coating on the metal layer, a dielectric layer on the anti-reflection coating, and a via hole that passes through the dielectric layer and the anti-reflection coating down to a predetermined depth within the metal layer, the method comprising:
- forming a titanium layer on the bottom and on the walls of the via hole;
- performing a low temperature deposition process to form a first titanium nitride layer on the titanium layer;
- performing a chemical vapor deposition process to form a second titanium nitride layer on the first titanium nitride layer;
- and
- forming the via plug in the via hole.
Dependencies are inferred from the claim text.