Method of fabricating gate structure of semiconductor device for repairing damage to gate oxide layer

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• forming a conductive layer containing silicon on the gate oxide layer,
• forming a gate by etching the conductive layer;
• forming a silicon source layer which covers an exposed sidewall of the gate;
• and
• repairing damage to the gate oxide layer by thermally treating the silicon source layer in an oxidation atmosphere, wherein the silicon source layer is formed by selectively epitaxial-growing silicon on the exposed sidewall of the gate.

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• forming a conductive layer containing silicon on the gate oxide layer;
• forming a gate by etching the conductive layer;
• forming a silicon source layer which covers an exposed sidewall of the gate;
• and
• repairing damage to the gate oxide layer by thermally treating the silicon source layer in an oxidation atmosphere, wherein in forming the gate, the conductive layer is anisotropically etched until the gate oxide layer is exposed, and wherein the silicon source layer is selectively epitaxial-grown from the semiconductor substrate exposed.

A method of fabricating a gate of a semiconductor device, comprising:

• forming a gate oxide layer on a semiconductor substrate;
• sequentially forming a polycrystalline silicon layer and a tungsten silicide layer on the gate oxide layer;
• forming a gate by sequentially etching the tungsten silicide layer and the polycrystalline silicon layer;
• forming a silicon source layer which covers a sidewall of the gate;
• and
• repairing damage to the gate oxide layer by thermally treating the silicon source layer in an oxidation atmosphere.

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• sequentially forming a polycrystalline silicon layer and a tungsten silicide layer on the gate oxide layer;
• forming a gate by sequentially etching the tungsten silicide layer and the polycrystalline silicon layer;
• forming a silicon source layer which covers a sidewall of the gate;
• and
• repairing damage to the gate oxide layer by thermally treating the silicon source layer in an oxidation atmosphere, wherein the silicon source layer is formed by selectively epitaxial-growing silicon on the sidewall of the gate.

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• sequentially forming a polycrystalline silicon layer and a tungsten silicide layer on the gate oxide layer;
• forming a gate by sequentially etching the tungsten silicide layer and the polycrystalline silicon layer;
• forming a silicon source layer which covers a sidewall of the gate;
• and
• repairing damage to the gate oxide layer by thermally treating the silicon source layer in an oxidation atmosphere, wherein in forming the gate, the tungsten silicide layer and the polycrystalline silicon layer are anisotropically etched until the gate oxide layer is exposed, and wherein the silicon source layer is selectively epitaxial-grown from the semiconductor substrate exposed.

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• forming a gate containing silicon on the gate oxide layer;
• forming a silicon source layer on an exposed sidewall of the gate;
• and
• not forming the silicon source layer on an exposed sidewall of the gate oxide;
• wherein the silicon source layer is formed by epitaxial-growing silicon on the exposed sidewall of the gate.

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• forming a gate containing silicon on the gate oxide layer;
• forming a silicon source layer on an exposed sidewall of the gate;
• and
• not forming the silicon source layer on an exposed sidewall of the gate oxide;
• repairing damage to the gate oxide layer by thermally treating the silicon source layer in an oxidation atmosphere.

A method of fabricating a gate of a semiconductor device, the method comprising:

• forming a gate oxide layer on a semiconductor substrate;
• forming a gate containing silicon on the gate oxide layer;
• forming a silicon source layer on an exposed sidewall of the gate;
• and
• not forming the silicon source layer on an exposed sidewall of the gate oxide;
• wherein in forming the gate, a conductive layer is anisotropically etched until the gate oxide is exposed;
• and
• wherein the silicon source layer is epitaxially grown from the semiconductor substrate exposed.