Methods of forming hemispherical grain silicon electrodes by crystallizing the necks thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Tae Kim, Kyung-Hoon Kim
Life of this patent
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Abstract
The crystallinity of non-monocrystalline silicon necks that connect monocrystalline silicon hemispherical grains to an underlying electrode on an integrated circuit substrate is increased. Preferably, the non-monocrystalline silicon necks are crystallized. By crystallizing the non-monocrystalline silicon necks, the necks may be made more resistant to breaking and detaching during subsequent cleaning processes. The non-monocrystalline silicon necks preferably are crystallized by thermal annealing after fabrication of the hemispherical grain silicon.
Claims18
A method of forming an integrated circuit electrode structure comprising the steps of:
- forming a plurality of monocrystalline silicon hemispherical grains on an electrode on an integrated circuit substrate, and a plurality of non-monocrystalline silicon necks that connect the hemispherical grains to the electrode;
- then
- converting the plurality of non-monocrystalline silicon necks to a plurality of monocrystalline silicon necks;
- and then
- cleaning the plurality of monocrystalline silicon hemispherical grains in a solution that etches non-monocrystalline silicon, such that the monocrystalline silicon necks are not etched sufficiently to break and dislodge the hemispherical grains.
A method of forming an integrated circuit electrode structure comprising the steps of:
- forming a plurality of monocrystalline silicon hemispherical grains on an amorphous silicon electrode on an integrated circuit substrate, and a plurality of non-monocrystalline silicon necks that connect the hemispherical grains to the amorphous silicon electrode;
- then
- increasing the crystallinity of the plurality of non-monocrystalline silicon necks;
- and then
- cleaning the plurality of monocrystalline silicon hemispherical grains in a solution that etches non-monocrystalline silicon, such that the necks of increased crystallinity are not etched sufficiently to break and dislodge the hemispherical grains.
Dependencies are inferred from the claim text.