Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
OwnerChiung-tung Liinventor
Life of this patent
Estimating the term…
Abstract
A first III-V semiconductor wafer is bonded to a second III-V semiconductor wafer, e.g. by thermal fusion. The {110} crystal plane of the III-V semiconductor wafer is displaced angularly relative to the {110} crystal plane of the second III-V semiconductor wafer. Because of this, the tendency of the bonded wafer to break is reduced and many backside processes can be moved to front side and results in a robust device manufacturing process.
Claims23
A method comprising the act of bonding a first III-V semiconductor wafer to a second III-V semiconductor wafer so that the {110} plane of said first III-V semiconductor wafer is displaced at an angle relative to the {110} plane of said second III-V semiconductor wafer, wherein the effective rotational misalignment between said first and second wafers is at or near its maximum effective value.
A method comprising the acts of:
- bonding a first III-V semiconductor wafer to a second III-V semiconductor wafer so that the {110} plane of said first III-V semiconductor wafer is displaced at an angle relative to the {110} plane of the second III-V semiconductor wafer;
- forming integrated circuits in the first wafer;
- and then
- removing the second wafer after said forming.
A method comprising the act of:
- bonding a first III-V semiconductor wafer to a second III-V semiconductor wafer so that the {110} plane of said first III-V semiconductor wafer is displaced at an angle relative to the {110} plane of the second III-V semiconductor wafer;
- and
- forming an etch stop layer between said first and second wafers.
Method comprising the acts of:
- forming a structure comprising an etch stop layer, a III-V semiconductor wafer on a first side of said etch stop layer, and a second wafer on a second side of said etch stop layer;
- forming one or more semiconductor devices in said III-V semiconductor wafer;
- and
- removing said second wafer from said structure, at least a portion of said step of removing comprising the act of etching the material of said second wafer from said structure, said etch stop layer stopping said etching process so that said III-V semiconductor wafer is not etched during said act of removing.
Method comprising:
- providing a structure comprising a first etch stop layer, a III-V semiconductor wafer on a first side of said etch stop layer, and a second wafer on a second side of said etch stop layer;
- forming one or more semiconductor devices in said III-V semiconductor wafer;
- and
- etching a hole through said III-V semiconductor wafer, said etch stop layer preventing said hole from extending past said etch stop layer during said etching.
A method comprising:
- bonding a first side of a first III-V semiconductor wafer to a second III-V semiconductor wafer so that the {110} plane of said first III-V semiconductor wafer is displaced at an angle relative to the {110} plane of said second III-V semiconductor wafer by an angle;
- and
- forming devices on a second side of said first III-V semiconductor wafer that is opposite to said first side of said first III-V semiconductor wafer.
A method comprising:
- bonding a first III-V semiconductor wafer to a second III-V semiconductor wafer so that the {110} plane of said first III-V semiconductor wafer is displaced at an angle relative to the {110} plane of said second III-V semiconductor wafer by an angle to substantially strengthen said fist and second wafers, and render said first and second wafers resistant to fracture.
Dependencies are inferred from the claim text.