Method for fabricating nonvolatile ferroelectric memory
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsKi Young Oh, Ki Hyun Yoon
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Abstract
Method for fabricating a nonvolatile ferroelectric memory, is disclosed, which can prolong a life time of the memory, including the steps of forming an insulating film on a semiconductor substrate, forming a bottom electrode on the insulating film, forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, the material having an antiferroelectric phase which can not be induced to a ferroelectric phase by an electric field, and the induced ferroelectric phase exhibiting a hysteresis in polarization-electric field characteristic and unable to be induced to an antiferroelectric phase by an electric field, and forming a top electrode on the ferroelectric film.
Claims15
A method for fabricating a nonvolatile ferroelectric memory, comprising:
- forming an insulating film on a semiconductor substrate;
- forming a bottom electrode on the insulating film;
- forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, the material having an antiferroelectric phase which can not be induced to a ferroelectric phase by an electric field, and the induced ferroelectric phase exhibiting a hysteresis in polarization-electric field characteristic and unable to be induced to an antiferroelectric phase by an electric field, wherein the ferroelectric film is formed by controlling a composition of PNZST or PZST, wherein the ferroelectric film is formed of the PNZST or PZST, with the ratio of Z and S being 6:4 and a content of T not less than 0.065;
- and,
- forming a top electrode on the ferroelectric film.
A method for fabricating a nonvolatile ferroelectric memory, comprising:
- forming an insulating film on a semiconductor substrate;
- forming a bottom electrode on the insulating film;
- forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, the material having an antiferroelectric phase which can be induced to a ferroelectric phase by heating, and the induced ferroelectric phase exhibiting a hysteresis in polarization-electric field characteristic and unable to be induced to an antiferroelectric phase by an electric field, wherein the ferroelectric film is formed by controlling a composition of PNZST or PZST, wherein the ferroelectric film is formed of the PNZST or PZST, with the ratio of Z and S being 6:4 and a content of T not less than 0.1;
- and,
- forming a top electrode on the ferroelectric film.
A method for fabricating a nonvolatile ferroelectric memory, comprising:
- forming an insulating film on a semiconductor substrate;
- forming a bottom electrode on the insulating film;
- forming a ferroelectric film on the bottom electrode, wherein the ferroelectric film is formed of a material containing zirconium oxide as a base composition, wherein the material has a ferroelectric phase at a room temperature, can not be induced to an antiferroelectric phase by an electric field or heating, and exhibits a hysteresis in polarization-electric field characteristic.
Dependencies are inferred from the claim text.