Semiconductor device with high-temperature ohmic contact and method of forming the same

A semiconductor device having high-temperature stability, comprising:

• a semiconductor layer;
• a prelayer disposed on the semiconductor layer;
• a refractory layer disposed on the prelayer, wherein the refractory layer comprises a refractory metal of either a metal silicide, a metal phosphide, or a metal nitride;
• and
• a conductive layer disposed on the refractory layer, wherein:
• the refractory layer inhibits migration of elements between the conductive layer and the semiconductor layer;
• and
• the prelayer inhibits loss of adhesion between the refractory layer and the semiconductor layer.

A semiconductor device having high-temperature stability, comprising:

• a semiconductor layer;
• a prelayer disposed on the semiconductor layer;
• a refractory layer disposed on the prelayer, wherein the refractory layer comprises a refractory metal combined with at least one added element to form a non-stoichiometric mixed material, the added element reducing strain between the refractory layer and the prelayer;
• and
• a conductive layer disposed on the refractory layer, wherein:
• the refractory layer inhibits migration of elements between the conductive layer and the semiconductor layer;
• and
• the prelayer inhibits loss of adhesion between the refractory layer and the semiconductor layer.

A semiconductor device having high-temperature stability, comprising:

• a semiconductor layer;
• a prelayer disposed on the semiconductor layer;
• a refractory layer disposed on the prelayer;
• and
• a conductive layer disposed on the refractory layer and including a bonding layer and at least one barrier layer, the at least one barrier layer disposed between the refractory layer and the bonding layer, wherein:
• the refractory layer inhibits migration of elements between the conductive layer and the semiconductor layer;
• and
• the prelayer inhibits loss of adhesion between the refractory layer and the semiconductor layer.

A semiconductor device having high-temperature stability, comprising:

• a semiconductor layer;
• a prelayer disposed on the semiconductor layer;
• a refractory layer disposed on the prelayer;
• and
• a conductive layer disposed on the refractory layer, wherein:
• the refractory layer inhibits migration of elements between the conductive layer and the semiconductor layer;
• and
• the prelayer inhibits loss of adhesion between the refractory layer and the semiconductor layer, a metal-to-semiconductor junction is formed between the prelayer and the semiconductor layer, and the prelayer comprises at least one of a metal, a multi-layer metal, and an intermetallic compound.