US 6,320,237 B1 · Decoupling capacitor structure

Abstract

A capacitor structure (10) is implemented in an integrated circuit chip (11) along with other devices at the device level in the chip structure. The capacitor structure includes an elongated device body (17) formed from a first semiconductor material. This device body (17) is bordered on both lateral sides by lateral regions (20, 22) formed from a second semiconductor material. A dielectric layer (28) overlays both lateral regions (20, 22) and the device body (17), while an anode layer (30) overlays the dielectric layer in an area defined by the device body. Each lateral region (20, 22) is coupled to ground at a first end (25) of the elongated device body (17). The anode (30) is coupled to the chip supply voltage at a second end (33) of the device body opposite to the first end. The entire structure is designed and dimensioned to form an area-efficient and high-frequency capacitor.

Claims20

Dependent claims

A semiconductor capacitor structure comprising:

(a) a device body formed from semiconductor material;
(b) a first lateral region formed along a first lateral side of the device body, the first lateral region being formed from semiconductor material and being coupled to ground at a first end of the device body;
(c) a second lateral region formed along a second lateral side of the device body opposite the first lateral side, the second lateral region being formed from the same semiconductor material as the first lateral region and being coupled to ground at a first end of the device body;
(d) a dielectric layer formed over an upper surface of the device body, over an upper surface of the first lateral region, and over an upper surface of the second lateral region;
and
(e) an anode layer formed over an upper surface of the dielectric layer in an area defined by the upper surface of the device body, the anode layer connected to a circuit supply voltage at a second end of the device body.

3 more elements

An integrated circuit having a plurality of semiconductor circuit devices formed at a circuit device level, the integrated circuit including:

(a) a device body formed from semiconductor material at the circuit device level in the integrated circuit;
(b) a first lateral region formed along a first lateral side of the device body at the circuit device level, the first lateral region being formed from semiconductor material and being coupled to ground at a first end of the device body;
(c) a second lateral region formed along a second lateral side of the device body opposite the first lateral side at the circuit device level, the second lateral region being formed from the same type of semiconductor material from which the first lateral region is formed and being coupled to ground at a first end of the device body;
(d) a dielectric layer formed at the circuit device level over an upper surface of the device body, over an upper surface of the first lateral region, and over an upper surface of the second lateral region;
and
(e) an anode layer formed at the circuit device level over an upper surface of the dielectric layer in an area defined by the upper surface of the device body, the anode layer coupled to a circuit supply voltage at a second end of the device body.

3 more elements

Dependencies are inferred from the claim text.

Decoupling capacitor structure

Life of this patent

Decoupling capacitor structure

Life of this patent

Abstract

Claims20