Multiple active layer integrated circuit and a method of making such a circuit
AssigneeAdvanced Micro Devices, Inc.
InventorBin Yu
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes multiple active layers. Preferably, a semiconductor-on-insulator (SOI) or silicon-on-insulator wafer is utilized to house a first active layer. A second active layer is provided by bonding a bulk substrate to the SOI substrate and removing the bulk substrate to leave a thin semiconductor layer. Subsequent active layers can be added by a similar technique. Preferably, the bulk substrates utilize a hydrogen implant to provide a breaking interface.
Claims20
An integrated circuit, comprising:
- a first semiconductor-on-insulator substrate including a first active layer and a first insulating layer, the first insulating layer being a buried insulating layer, the first active layer containing a first channel region between a pair of isolation structures and being a thin film having a thickness of less than 800 Angstroms, the isolation structures extending to a top surface of the first insulating layer, the first insulating layer being below the first active layer;
- a second insulating layer above the first active layer of the first semiconductor-on-insulator substrate;
- a second active layer containing a second channel region, the second active layer being attached to the second insulating layer by a bonding region, the second active layer being a thin film having a thickness of less than 800 Angstroms, the bonding region including a high density of OH bonding sites;
- and
- a third insulating layer above the second active layer.
A multilayer structure for containing a plurality of transistors, the multilayer structure comprising:
- a first composite layer including a first semiconductor substrate, a buried oxide layer, a first active semiconductor layer, and a first insulating layer, the first semiconductor substrate being disposed below the buried oxide layer, the buried oxide layer being disposed below the first active layer, the first active layer being disposed below the first insulating layer and being a thin semiconductor film;
- a bonding interface including OH bonding sites;
- and
- a second active layer bonded to the first insulating layer at the bonding interface.
A multilayer integrated circuit, comprising:
- a first integrated circuit including a semiconductor-on-insulator layer including a first thin film active layer, a first insulating layer and a second insulating layer, the first active layer containing a first channel region, the first insulating layer being below the first thin film active layer, the first thin film active layer being below the second insulating layer;
- a first bonding interface including OH bonding sites;
- a second integrated circuit including a second thin film active layer containing a second channel region, the second thin film active layer being attached to the second insulating layer at the bonding interface;
- and
- a third insulating layer above the second active layer.
Dependencies are inferred from the claim text.