Superlattice fabrication for InAs/GaSb/AISb semiconductor structures

Abstract

A semiconductor structure and a method of forming same is disclosed. The method includes forming, on a substrate, an n-doped collector structure of InAs/AlSb materials; forming a base structure on said collector structure which base structure comprises p-doped GaSb; and forming, on said base structure, an n-doped emitter structure of InAs/AlSb materials. The collector and emitter structure are preferably superlattices each comprising a plurality of periods of InAs and AlSb sublayers. A heterojunction bipolar transistor manufactured using the method is disclosed.

Dependencies are inferred from the claim text.