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US 6,320,211 B1Granted
Semiconductor device and electronic device by use of the semiconductor
AssigneeCanon Kabushiki Kaisha
InventorMasakazu Morishita
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided with a collector region having a first material of a first conductivity type. A base region is provided having a second material of the opposite conductivity type, and an emitter region is also provided having a third material of the first conducting type. A thin film is disposed on the emitter region for facilitating a tunnel current. A semiconductor is disposed on the thin film and has an energy band gap broader than that of the third material.
Claims13
A semiconductor device comprising:
- a semiconductor material including:
- a collector region of a first conductivity type;
- a base region of a second conductivity type opposite to the first conductivity type, said base region being provided in contact with said collector region;
- and
- an emitter region of the first conductivity type provided in contact with said base region;
- an insulating material provided on said emitter region, said insulating material having (a) an insulating thin film portion for permitting a tunnel current of an electron and a hole to flow therethrough, said insulating thin film portion being provided on said emitter region, and (b) an insulating layer portion having a thickness larger than said insulating thin film portion, said insulating layer portion being provided adjacent said insulating thin film portion on a region including at least a part of said emitter region;
- and
- a layer of another semiconductor material provided at least on said insulating thin film portion, said layer of said another semiconductor material having an energy band gap broader than the semiconductor material forming said emitter region.
5 more elements
A semiconductor device comprising:
- a semiconductor material including:
- a collector region of a first conductivity type;
- a base region of a second conductivity type opposite to the first conductivity type, said base region being provided in contact with said collector region;
- and
- an emitter region of the first conductivity type provided in contact with said base region:
- an insulating thin film for permitting a tunnel current of an electron and a hole to flow therethrough, said insulating thin film being provided on said emitter region;
- an insulating layer formed of an insulating material provided adjacent said insulating thin film on a region including at least a part of said emitter region;
- and
- a layer of another semiconductor material provided on said insulating thin film, said layer of said another semiconductor material having an energy band gap broader than the semiconductor material forming said emitter region,
- wherein said layer of said another semiconductor material having the broader energy band gap comprises a material selected from the group consisting of microcrystalline silicon, GaAs and SiC.
7 more elements
A photovoltaic conversion device comprising:
- a semiconductor material including:
- a collector region of a first conductivity type;
- a base region of a second conductivity type opposite to the first conductivity type, said base region being provided in contact with said collector region;
- and
- an emitter region of the first conductivity type provided in contact with said base region;
- an insulating material provided on said emitter region, said insulating material having (a) an insulating thin film portion for permitting a tunnel current of an electron and a hole to flow therethrough, said insulating thin film portion being provided on said emitter region, and (b) an insulating layer portion having a thickness larger than said insulating thin film portion, said insulating layer portion being provided adjacent said insulating thin film portion on a region including at least a part of said emitter region;
- and
- a layer of another semiconductor material provided at least on said insulating thin film portion, said layer of said another semiconductor material having an energy band gap broader than the semiconductor material forming said emitter region.
5 more elements
Dependencies are inferred from the claim text.