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US 6,320,205 B1Granted
Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode
AssigneeInfineon Technologies AG
InventorsFrank Pfirsch, Roland Rupp
Life of this patent
Estimating the term…
Abstract
An edge termination for a semiconductor component containing a semiconductor body formed of silicon carbide. The edge termination has at least one diode chain that is insulated from the semiconductor body and provided with a plurality of semiconductor layers having alternating conductivity types.
Claims18
A semiconductor component, comprising:
- a semiconductor body formed of silicon carbide;
- an insulation layer disposed on said semiconductor body;
- and
- an edge termination having at least one diode chain disposed on said insulation layer and thereby being insulated from said semiconductor body, said diode chain having a large number of semiconductor layers formed of alternating conductivity types.
1 more element
In combination with a semiconductor component having a semiconductor body formed of silicon carbide, an edge termination for the semiconductor component, the edge termination comprising:
- an insulation layer disposed on the semiconductor body;
- and
- at least one diode chain disposed on said insulation layer and thereby being insulated from the semiconductor body, said diode chain having a large number of semiconductor layers formed of alternating conductivity types.
A Schottky diode, comprising:
- a semiconductor body of a first conductivity type, formed of silicon carbide, and having a first surface and a second surface, said semiconductor layer having a dopant layer of the first conductivity type and a top of said dopant layer defining said first surface of said semiconductor body, said dopant layer having a dopant concentration lower than that of a remainder of said semiconductor body;
- a metallic first electrode disposed on said first surface and forms a Schottky contact with said semiconductor body;
- a second electrode contacting said semiconductor body on said second surface;
- an insulation layer disposed on said first surface of said semiconductor body;
- a reference ground potential terminal;
- and
- an edge termination having at least one diode chain disposed on said insulation layer and thereby being insulated from said semiconductor body, said diode chain having a large number of semiconductor layers formed of alternating conductivity types, said diode chain connected to the first electrode and to said reference-ground potential terminal.
4 more elements
Dependencies are inferred from the claim text.