Substrate with conductor formed of low-resistance aluminum alloy
AssigneeCasio Computer Co., Ltd.
InventorsKenji Kamiya, Junji Shiota
Life of this patent
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Abstract
A wiring substrate is disclosed, which has optimal characteristics for, for example, an active matrix type liquid crystal display device with a thin film transistor. Wiring formed of an Al-Nd-Ti alloy thin film is formed on a glass substrate, and if necessary, a semiconductor element which is electrically connected to the wiring is formed. In this case, the specific resistance of the Al-Nd-Ti alloy thin film is about 8 μΩ cm if the Nd concentration is 0.75 at % and the Ti concentration is 0.5 at %. Further, even if the resultant substrate is heated at 240-270 C. after the formation of the wiring, occurrence of a hillock and a pinhole is substantially completely suppressed.
Claims16
A wiring substrate comprising:
- a substrate;
- and
- a conductor formed on the substrate, wherein
- the conductor made of an aluminum alloy consists essentially of aluminum, neodymium and titanium and contains at least about 0.1 atm % neodymium and at least about 0.1 atm % titanium with a maximum total amount of titanium and neodymium of 3.5 atm %.
A wiring substrate comprising:
- a substrate;
- a
- a semiconductor element formed on the substrate;
- a conductor formed on the substrate and
- electrically connected to the semiconductor element,
- the conductor made of an aluminum alloy consisting essentially of aluminum, neodymium and titanium and containing at least about 0.1 atm % neodymium and at least about 0.1 atm % titanium with a maximum total amount of titanium and neodymium of 3.5 atm %.
A method of manufacturing a wiring substrate,
- comprising the steps of:
- preparing a substrate;
- forming on the substrate a conductor made of an
- aluminum alloy consisting essentially of aluminum, neodymium and titanium and containing at least about 0.1 atm % neodymium and at least about 0.1 atm % titanium with a maximum total amount of titanium and neodymium of 3.5 atm %;
- forming on the substrate a semiconductor element electrically connected to the conductor;
- and
- heating at least one of the conductor and the semiconductor element to 300° C. or less.
A method of manufacturing a wiring substrate,
- comprising the steps of:
- preparing a substrate;
- forming a semiconductor element on the substrate;
- forming on the substrate a conductor made of an aluminum alloy consisting essentially of aluminum, neodymium and titanium and containing at least about 0.1 atm % neodymium and at least about 0.1 atm % titanium with a maximum total amount of titanium and neodymium of 3.5 atm %, such that the conductor is electrically connected to the semiconductor element;
- and
- heating at least one of the conductor and the semiconductor element to 300° C. or less.
A method of manufacturing a wiring substrate according to claim 18, wherein the concentration of neodymium is up to 1.0 atm % and the concentration of titanium is more than 0.1 atm %.
Dependencies are inferred from the claim text.