Method of improving deposition
AssigneeUnited Microelectronics Corp.
InventorsHsueh-Hao Shih, Alan Cheng, Juan-Yuan Wu
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Abstract
A method for improving the quality of a deposited layer over a silicon substrate in a selective deposition where the silicon substrate has a native oxide layer thereon. A plasma reaction using a halogen compound as a reactive agent is performed so that the native oxide layer is transformed into a silicon halide layer and then removed at low pressure. A layer of the desired material is formed over the native oxide free silicon substrate surface by selective deposition.
Claims16
A method for improving the quality of a deposited layer over a silicon substrate in a selective deposition, where the silicon substrate has a native oxide layer thereon, comprising:
- performing a plasma reaction at a temperature higher than 200° C. using a halogen compound as a reactive agent so that the native oxide layer is transformed into a silicon halide to be removed under a low pressure, wherein the kinetic energy of the plasma in the plasma reaction is controlled so that any damage to the silicon layer underneath the native oxide layer is preserved;
- and
- forming a desired material layer over the native oxide free silicon substrate surface by selective deposition.
A method for removing native oxide layer from a silicon substrate, comprising performing a plasma reaction at a temperature not lower than 200° C. using a halogen compound as a reactive agent so that the native oxide layer is converted into a silicon halide and then removed at low pressure, wherein the plasma reaction is a remote reaction.
Dependencies are inferred from the claim text.