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US 6,319,817 B1Granted
Method of forming viahole
AssigneeSony Corporation
InventorsHiroshi Komatsu, Makoto Hashimoto, Motoaki Nakamura
Life of this patent
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Abstract
A method of forming a viahole in an interlayer insulating film without formation of irregularities on a side wall of the viahole. The method includes a first step of forming a viahole in an interlayer insulating film having a multi-layer structure of plural kinds of insulating layers; a second step of forming a side wall film on a side wall of the viahole; and a third step of removing a native oxide film formed on a bottom portion of the viahole by etching.
Claims11
A method of forming a viahole, comprising:
- forming a viahole in a single step through an interlayer insulating film having a multi-layer structure comprising a plurality of adjacent insulating layers which are formed of a plurality of different types of insulating material, said different types of insulating material having different polishing rates;
- forming an oxide film by oxidizing a layer underlying said insulating film at least at a bottom portion of said viahole;
- forming a side wall film on a side wall of said viahole;
- removing said oxide film;
- and
- removing a native oxide film formed on a bottom portion of said viahole by etching.
3 more elements
Dependencies are inferred from the claim text.