Electric wiring forming method with use of embedding material

A method for forming a wiring structure on a semiconductor substrate, comprising following steps:

• a step for forming a first low dielectric constant dielectric film, a first etching stopper, a second low dielectric constant dielectric film and a second etching stopper, sequentially on said semiconductor substrate;
• a step for forming a first resist mask having a pattern for forming via-holes on the second etching stopper film;
• a step for forming via-holes, which pass through to the bottom of the first low dielectric constant dielectric film, through said first resist mask;
• a step for filling an embedding material, which mainly includes a thermo-bridge forming compound consisting essentially of a nitrogen containing compound including at least an amino substituent wherein the amino substituent thereof is substituted by a hydroxyalkyl or alkoxyalkyl radical or both therein, into said via-holes, and for heating the embedding material to harden;
• a step for etching back on the embedding material being heated to be hardened forming a protection film the bottom of the via holes;
• a step for forming a second resist mask having a pattern for forming trench holes on said second etching stopper film;
• a step for forming the trench holes on said second low dielectric film through said second resist mask, while removing the embedding material remaining on the bottom of said via-holes;
• and
• a step for embedding metal into said trench holes and said via-holes.