Method of manufacturing a semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMasatoshi Anma, Yoshinori Tanaka, Yoshifumi Takata
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Abstract
Sintering is effected a gate insulating film of a transistor in a hydrogen atmosphere at a temperature from 450° C. to 600° C. only before formation of an interconnection layer such as an aluminum interconnection layer which is less resistant to heat treatment at a temperature of 450° C. or more. Thereby, a method of manufacturing a semiconductor device can bring about sufficient recovery of a gate insulating film from process damages and others while preventing an adverse effect on the interconnection layer less resistant to the heat treatment at a high temperature.
Claims7
A method of manufacturing a semiconductor device comprising the steps of:
- forming a field-effect transistor on a semiconductor substrate;
- and
- forming a first conductive interconnection causing a crystal defect if thermally processed at a temperature higher than 450° C. after formation of said transistor, wherein
- said method includes the step of effecting high-temperature sintering on a gate insulating film of said transistor within a hydrogen atmosphere at a temperature from 450° C. to 600° C. only after said step of forming said transistor and before said step of forming said first conductive interconnection.
Dependencies are inferred from the claim text.