T-gate formation using modified damascene processing with two masks
AssigneeAdvanced Micro Devices, Inc.
InventorsRamkumar Subramanian, Christopher F. Lyons, Bhanwar Singh, Marina Plat
Life of this patent
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Abstract
A method for fabricating a T-gate structure is provided. A structure is provided that has a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer and a sacrificial layer over the protection layer. An opening is then formed in the sacrificial layer. A contact material is deposited over the sacrificial layer filling the opening with the contact material and forming a contact layer. Portions of the contact material outside a gate region are then removed. Finally, the sacrificial layer and portions of the protection layer and the gate oxide layer not forming a part of the T-gate structure are removed.
Claims20
A method for fabricating a T-gate structure comprising the steps of:
- providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer and a sacrificial layer over the protection layer;
- forming an opening in the sacrificial layer;
- depositing a contact material over the sacrificial layer filling the opening with the contact material and forming a contact layer;
- removing portions of the contact material outside a gate region;
- and
- removing the sacrificial layer and portions of the protection layer and the gate oxide layer not forming a part of the T-gate structure.
A method for fabricating a T-gate structure comprising the steps of:
- providing a silicon layer having a gate oxide layer, a protection layer over the gate oxide layer and a sacrificial layer over the protection layer, the protection layer being one of a polysilicon and a germanium material;
- forming an opening in the sacrificial layer;
- depositing a contact material over the sacrificial layer filling the opening with the contact material and forming a contact layer, the contact material being one of a polysilicon material and a germanium material;
- removing portions of the contact material outside a gate region;
- and
- removing the sacrificial layer and portions of the protection layer and the gate oxide layer not forming a part of the T-gate structure.
A method for fabricating a T-gate structure comprising the steps of:
- providing a silicon layer having a gate oxide layer, a protection layer having a thickness within the range of about 50 Å to 150 Å over the gate oxide layer and a sacrificial layer having a thickness within the range of about 400 Å to 600 Å over the protection layer, the protection layer being formed from one of a polysilicon and germanium material;
- etching an opening in the sacrificial layer;
- depositing a polysilicon material over the sacrificial layer filling the opening with the polysilicon material and forming a polysilicon layer;
- removing portions of the polysilicon material outside a gate region;
- removing the sacrificial layer;
- and
- etching portions of the protection layer and the gate oxide layer not forming a part of the T-gate structure using one of a wet etch and a vertical plasma etch.
Dependencies are inferred from the claim text.