Manufacture of an integrated circuit isolation structure

A method, comprising:

• forming a number of trenches in an integrated circuit substrate;
• depositing a dielectric material in the trenches, the dielectric material being provided by a high density plasma having a deposition-to-etch ratio of at least about 5;
• providing a number of circuit components along the substrate;
• and
• removing at least a portion of the dielectric material by chemical-mechanical polishing.

A method, comprising:

• forming a number of trenches in an integrated circuit substrate, the trenches defining a number of substrate regions to be electrically isolated from one another;
• depositing a dielectric material in the trenches by exposure to a high density plasma having a first deposition-to-etch ratio;
• adjusting the high density plasma to a second deposition-to-etch ratio greater than the first ratio to accumulate the dielectric material on the substrate after at least partially filling the trenches;
• and
• removing a portion of the dielectric material to planarize the workpiece.

A method, comprising:

• forming a number of trenches in a substrate of a workpiece;
• at least partially filling the trenches with a first dielectric material, the first dielectric material being provided by a high density plasma having a deposition-to-etch ratio of at least about 5;
• depositing a second dielectric material on the first dielectric material, the second dielectric material having a different composition than the first dielectric material;
• planarizing the workpiece after said depositing;
• and
• providing a number of integrated circuit components along the substrate.