Process for fabricating semiconductor device with multiple cylindrical capacitor
AssigneeNEC Corporation
InventorRyo Kubota
Life of this patent
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Abstract
A method for making a semiconductor device is provided. In the method, an insulating layer is formed over a semiconductor substrate, and a groove is formed in the insulating layer. Then, a first conductive layer, a first mask layer, a second conductive layer, and a second mask layer are sequentially and conformably formed on an upper surface of the insulating layer and an inner surface of the groove to form a laminated layer. Afterwards, the laminated layer is anisotropically etched to form a multiple cylindrical structure in the groove, and a multiple cylindrical electrode is formed based on the multiple cylindrical structure. Subsequently, a dielectric layer and a plate electrode are sequentially formed on the multiple cylindrical electrode to create a capacitor.
Claims33
A process for fabricating a semiconductor integrated circuit device, comprising the steps of:
- a) forming a groove in a first insulating layer over a semiconductor substrate;
- b) conformably forming a conductive layer and a mask layer on an upper surface of said first insulating layer and an inner surface defining said groove;
- c) repeating said step b) so that plural conductive layers and the plural mask layers form in combination a lamination conformably extending on said upper surface and said inner surface;
- d) anisotropically etching said lamination so as to form a multiple cylindrical structure in said groove;
- e) completing a multiple cylindrical electrode on the basis of said multiple cylindrical structure;
- and
- f) opposing a counter electrode to said multiple cylindrical electrode through a dielectric layer so as to complete a capacitor.
A method for making a semiconductor device, comprising:
- (a) forming a groove in a first insulating layer over a substrate;
- (b) forming a first conductive layer over an inner surface of said groove such that said first conductive layer substantially conforms to a groove shape substantially corresponding to said inner surface;
- (c) forming a first mask layer over said inner surface of said groove such that said first mask layer substantially conforms to said groove shape;
- (d) forming a second conductive layer over said inner surface of said groove such that said second conductive layer substantially conforms to said groove shape;
- (e) forming a second mask layer over said inner surface of said groove such that said second mask layer substantially conforms to said groove shape;
- and
- (f) etching said first conductive layer, said first mask layer, said second conductive layer, and said second mask layer to form a multiple cylindrical structure in said groove.
Dependencies are inferred from the claim text.