Capacitor in a semiconductor device and a fabricating method thereof
AssigneeHyundai Electronics Industries Co., Ltd.
InventorBok-Won Cho
Life of this patent
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Abstract
The present invention relates to a capacitor in a semiconductor device and a fabricating method thereof. More particularly, the invention relates to a method of forming a storage electrode of a capacitor in a semiconductor device and a fabricating method thereof which provide a sufficient electric charge capacitance for a highly-integrated memory device and which reduces the step difference between cell and peripheral areas. In preferred embodiments, the storage electrode has a plurality of hemispherical protruding parts, and an electrically conductive layer formed on the protruding parts. The electrically conductive layer prevents the formation of an oxide layer between the storage electrode and a dielectric layer formed over the storage electrode.
Claims15
A method of fabricating a capacitor, comprising:
- forming a contact hole by removing a portion of an insulating layer formed on a substrate, wherein the substrate has an impurity diffusion region, and wherein the contact hole exposes at least a portion of the impurity diffusion region;
- forming an electrically conductive plug in the contact hole, wherein the electrically conductive plug is in electrical contact with the impurity diffusion region;
- forming a first electrode on the insulating layer and the electrically conductive plug;
- forming a tungsten (W) layer to a thickness of about 50 to 200 Å on the first electrode by flowing WF6 gas at about 250 to 500° C. for about 3 to 20 minutes;
- forming a dielectric layer on the tungsten layer;
- and
- forming a second electrode on the dielectric layer.
A method of fabricating a capacitor, comprising:
- forming a first electrode over a substrate;
- forming a plurality of hemispherical protruding parts on the first electrode by flowing SiH4 gas over the first electrode under a vacuum state that ranges from approximately 1.0E(−7) Torr to approximately 5.0E(−8) Torr;
- forming a dielectric layer over the first electrode including the plurality of hemispherical protruding parts;
- annealing the dielectric layer while substantially preventing an insulating material from forming between the first electrode and the dielectric layer;
- and
- forming a second electrode over the dielectric layer.
A method of fabricating a capacitor, comprising:
- forming a first electrode over a substrate;
- forming a plurality of hemispherical protruding parts on the first electrode by flowing SiH4 gas over the first electrode under a vacuum state that ranges from approximately 1.0E(−7) Torr to approximately 5.0E(−8) Torr;
- forming a tungsten (W) layer to a thickness of about 50 to 200 Å on the first electrode including the plurality of hemispherical portions by flowing WF6 gas at about 250 to 500° C. for about 3 to 20 minutes;
- forming a dielectric layer over the first electrode including the plurality of hemispherical portions and the tungsten layer;
- and
- forming a second electrode on the dielectric layer.
Dependencies are inferred from the claim text.